IRF530 Power MOSFET – THR

LKR50.00LKR55.00 (-9%)

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The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.
 

Features

  • Drain-Source Volt (Vds): 100V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 14A
  • Power Dissipation (Ptot): 88W
  • Type: N-Channel
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The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.
 

Features

  • Drain-Source Volt (Vds): 100V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 14A
  • Power Dissipation (Ptot): 88W
  • Type: N-Channel

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IRF530 Power MOSFET - THR

LKR50.00LKR55.00 (-9%)