IRF530 Power MOSFET – THR
LKR60.00LKR66.00 (-9%)
The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.
Features
- Drain-Source Volt (Vds): 100V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 14A
- Power Dissipation (Ptot): 88W
- Type: N-Channel
The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.
Features
- Drain-Source Volt (Vds): 100V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 14A
- Power Dissipation (Ptot): 88W
- Type: N-Channel
