BCP56T1G SOT-223 Bipolar Transistors
Collector-Emitter Breakdown Voltage (Vceo) | 80V |
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Power Dissipation (Pd) | 1.5W |
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Collector Current (Ic) | 1A |
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DC Current Gain (hFE@Ic,Vce) | 40@150mA,2V |
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Transition Frequency (fT) | 130MHz |
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@500mA,50mA |
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Transistor Type | NPN |
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Operating Temperature | -65℃~+150℃@(Tj) |
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Additional information
Weight | 3 g |
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