- You cannot add "Si2333DS 12V 4.1A P-Channel MOSFET (SOT-23) - SMD" to the cart because the product is out of stock.
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LKR590.00
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IRF3205PBF 55V 110A N-Channel MOSFET (TO-220) – THR
N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB
LKR228.00 -
LKR132.00
LKR150.00IPB80N03S4L 80A N-Channel mosfet
LKR132.00LKR150.00 -
FDS6675 30V 11A P-Channel MOSFET (SOIC-8) – SMD
TI LM2596S-3.3 TO-263 DC-DC Switching Converters
LKR78.00LKR84.00FDS6675 30V 11A P-Channel MOSFET (SOIC-8) – SMD
LKR78.00LKR84.00 -
FDS9945 60V 3.5A Dual N-Channel MOSFET (SOIC-8) – SMD
These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.Features - 3.5 A, 60 V
- RDS(ON) = 0.100Ω @ VGS = 10 V
- RDS(ON) = 0.200Ω @ VGS = 4.5 V
- Optimized for use in switching DC/DC converterswith PWM controllers
- Very fast switching
- Low gate charge
Applications - This product is general usage and suitable for many different applications.
- DC/DC Converters
LKR66.00LKR72.00FDS9945 60V 3.5A Dual N-Channel MOSFET (SOIC-8) – SMD
LKR66.00LKR72.00 -
UTM4953G-SO8-R Dual P-channel MOSFET 30V 4.9A
2 P Channel(Double) 30V 4.9A 2V @ 250uA 60 mΩ @ 4.9A,10V 2.5W SOP-8_150mil MOSFET RoHS
LKR60.00LKR78.00UTM4953G-SO8-R Dual P-channel MOSFET 30V 4.9A
LKR60.00LKR78.00 -
IRF530 Power MOSFET – THR
The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.
Features
- Drain-Source Volt (Vds): 100V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 14A
- Power Dissipation (Ptot): 88W
- Type: N-Channel
LKR60.00LKR66.00IRF530 Power MOSFET – THR
LKR60.00LKR66.00 -
IRFZ44N
IRFZ44N Power MOSFETIRFZ44N is an advanced HEXFET Power MOSFETs whichutilizes advanced processing techniques to achieveextremely low on-resistanceper silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design thatHEXFET power MOSFETsare wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.
Features of IRFZ44N Power MOSFET:- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175 DegreeC Operating Temperature
- Fast Switching
- Fully Avalanche Rated
LKR54.00LKR60.00IRFZ44N
LKR54.00LKR60.00 -
LKR42.00
LKR54.002N7002DW-7-F Dual N-channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363
LKR42.00LKR54.00