| Channel Type |
N |
| Maximum Continuous Drain Current |
24 A |
| Maximum Drain Source Voltage |
500 V |
| Package Type |
TO-3PN |
| Mounting Type |
Through Hole |
| Pin Count |
2 |
| Maximum Drain Source Resistance |
190 mΩ |
| Channel Mode |
Enhancement |
| Minimum Gate Threshold Voltage |
3V |
| Maximum Power Dissipation |
270 W |
| Transistor Configuration |
Single |
| Maximum Gate Source Voltage |
-30 V, +30 V |
| Number of Elements per Chip |
1 |
| Maximum Operating Temperature |
+150 °C |
| Transistor Material |
Si |
| Length |
15.8mm |
| Typical Gate Charge @ Vgs |
65 nC @ 10 V |
| Width |
5mm |
| Height |
20.1mm |
| Series |
UniFET |
| Minimum Operating Temperature |
-55 °C |
