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LKR3.60
LKR4.802SC828 25V 0.1A NPN Transistor (TO-92) – THR
LKR3.60LKR4.80 -
IRF530 Power MOSFET – THR
The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.
Features
- Drain-Source Volt (Vds): 100V
- Gate-Source Volt (Vgs): 20V
- Drain Current (Id): 14A
- Power Dissipation (Ptot): 88W
- Type: N-Channel
LKR60.00LKR66.00IRF530 Power MOSFET – THR
LKR60.00LKR66.00 -
IRFZ44N
IRFZ44N Power MOSFETIRFZ44N is an advanced HEXFET Power MOSFETs whichutilizes advanced processing techniques to achieveextremely low on-resistanceper silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design thatHEXFET power MOSFETsare wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.
Features of IRFZ44N Power MOSFET:- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175 DegreeC Operating Temperature
- Fast Switching
- Fully Avalanche Rated
LKR54.00LKR60.00IRFZ44N
LKR54.00LKR60.00 -
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1N4001 50V 1A GP Diode – THR
IN4001 – IN4007
Features
Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 3)Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 2
Marking: Type Number
Weight: 0.30 grams (Approximate)LKR2.40LKR3.001N4001 50V 1A GP Diode – THR
LKR2.40LKR3.00 -
TIP31C
Type Designator: TIP31C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: –
Package: TO220
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