• IRF640N

    Fifth Generation HEXFET® Power MOSFETs from
    International Rectifier utilize advanced processing
    techniques to achieve extremely low on-resistance per
    silicon area. This benefit, combined with the fast switching
    speed and ruggedized device design that HEXFET Power
    MOSFETs are well known for, provides the designer with an
    extremely efficient and reliable device for use in a wide
    variety of applications.
    The TO-220 package is universally preferred for all
    commercial-industrial applications at power dissipation levels
    to approximately 50 watts. The low thermal resistance and
    low package cost of the TO-220 contribute to its wide
    acceptance throughout the industry.
    The D2Pak is a surface mount power package capable of
    accommodating die sizes up to HEX-4. It provides the
    highest power capability and the lowest possible onresistance in any existing surface mount package. The
    D2Pak is suitable for high current applications because of its
    low internal connection resistance and can dissipate up to
    2.0W in a typical surface mount application.
    The through-hole version (IRF640NL) is available for lowprofile application

  • IRF530 Power MOSFET – THR

    The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.
     

    Features

    • Drain-Source Volt (Vds): 100V
    • Gate-Source Volt (Vgs): 20V
    • Drain Current (Id): 14A
    • Power Dissipation (Ptot): 88W
    • Type: N-Channel

    IRF530 Power MOSFET – THR

    LKR60.00LKR66.00
  • IRFZ44N

    IRFZ44N Power MOSFETIRFZ44N is an advanced HEXFET Power MOSFETs whichutilizes advanced processing techniques to achieveextremely low on-resistanceper silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design thatHEXFET power MOSFETsare wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.

    Features of IRFZ44N Power MOSFET:

    • Advanced Process Technology
    • Ultra Low On-Resistance
    • Dynamic dv/dt Rating
    • 175 DegreeC Operating Temperature
    • Fast Switching
    • Fully Avalanche Rated

    IRFZ44N

    LKR54.00LKR60.00
  • FDS9945 60V 3.5A Dual N-Channel MOSFET (SOIC-8) – SMD

    These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
     
    Features
       
    • 3.5 A, 60 V
    • RDS(ON) = 0.100Ω @ VGS = 10 V
    • RDS(ON) = 0.200Ω @ VGS = 4.5 V
    • Optimized for use in switching DC/DC converterswith PWM controllers
    • Very fast switching
    • Low gate charge
    Applications
    • This product is general usage and suitable for many different applications.
    • DC/DC Converters

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