-
D313 Bipolar Transistor (2SD313)
- Type –Â NPN
- Collector-Emitter Voltage:Â 60Â V
- Collector-Base Voltage:Â 60Â V
- Emitter-Base Voltage:Â 5Â V
- Collector Current:Â 3Â A
- Collector Dissipation –Â 30Â W
- DC Current Gain (hfe) – 40 to 320
- Transition Frequency –Â 5Â MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package –Â TO-220
 -
IRF640N
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for lowprofile application -
4N37 Transistor Output Optocoupler DIP-6
Transistor Output Optocoupler.
Features :
• Interfaces with Common Logic Families
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS®
• 5300 V RMS Isolation Test Voltage
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