- You cannot add "IPB80N03S4L 80A N-Channel mosfet" to the cart because the product is out of stock.
-
2N3904G-TO92
- Transistor Polarity: NPNÂ
- Collector- Emitter Voltage VCEO Max: 40 VÂ
- Emitter- Base Voltage VEBO: 6 VÂ
- Maximum DC Collector Current: 0.2 AÂ
- DC Collector/Base Gain hfe Min: 40 at 0.1 mA at 1 VÂ
- Configuration: SingleÂ
- Maximum Operating Frequency: 300 MHz (Min)Â
- Maximum Operating Temperature: + 150 CÂ
- Mounting Style: Through HoleÂ
- Package / Case: TO-92Â
- Packaging: BulkÂ
- Continuous Collector Current: 0.2 AÂ
- Minimum Operating Temperature: – 55 CÂ
- Power Dissipation: 625 mW
-
TIP31C
Type Designator: TIP31C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: –
Package: TO220
-
D313 Bipolar Transistor (2SD313)
- Type –Â NPN
- Collector-Emitter Voltage:Â 60Â V
- Collector-Base Voltage:Â 60Â V
- Emitter-Base Voltage:Â 5Â V
- Collector Current:Â 3Â A
- Collector Dissipation –Â 30Â W
- DC Current Gain (hfe) – 40 to 320
- Transition Frequency –Â 5Â MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package –Â TO-220
 -
IRF640N
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for lowprofile application -
LKR3.60
LKR4.802SC828 25V 0.1A NPN Transistor (TO-92) – THR
LKR3.60LKR4.80 -
MMBT4403LT1G (2T) 40V 0.5A PNP GP Transistor (SOT-23) – SMD
Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 300mW Surface Mount SOT-23-3 (TO-236)
LKR3.60 -
BC847 (1FW) 45V 0.1A NPN Transistor (SOT-23) – SMD
Bipolar Transistors – BJT SM SIGNAL TRANSISTOR
LKR3.60LKR4.20BC847 (1FW) 45V 0.1A NPN Transistor (SOT-23) – SMD
LKR3.60LKR4.20